Surface polymerization by ion-assisted deposition for polythiophene film growth

被引:30
作者
Tepavcevic, S [1 ]
Choi, Y [1 ]
Hanley, L [1 ]
机构
[1] Univ Illinois, Dept Chem, Chicago, IL 60607 USA
关键词
D O I
10.1021/ja029851s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Cationic polymerization is induced at the gas-solid interface by hyperthermal organic cations coincident on a surface with a thermal beam of organic monomers. This process, termed surface polymerization by ion-assisted deposition (SPIAD), produces films that maintain the chemical structure of the monomer. A polythiophene film is produced here by SPIAD with 100 eV thiophene ions and terthiophene monomers coincident on Si and indium tin oxide (ITO) substrates held under vacuum. X-ray photoelectron spectroscopy observes enhancement in film growth for SPIAD compared with either thiophene ion or terthiophene exposure alone. Polythiophene films grown by both mass-selected and nonmass-selected ions with coincident terthiophene dosing both display similar fluorescence intensities at two wavelengths characteristic of emission from films of the terthiophene monomer. Raman spectra of films from nonmass-selected ions display several vibrations also observed in terthiophene films. Ions therefore play a critical role in film growth from nonmass-selected ions, in addition to any radical or photochemically driven processes that may also occur. Copyright © 2003 American Chemical Society.
引用
收藏
页码:2396 / 2397
页数:2
相关论文
共 27 条
[1]   Excitonic effects in thiophene oligomers [J].
Bosisio, R ;
Botta, C ;
Colombo, A ;
Destri, S ;
Porzio, W ;
Grilli, E ;
Tubino, R ;
Bongiovanni, G ;
Mura, A ;
DiSilvestro, G .
SYNTHETIC METALS, 1997, 87 (01) :23-29
[2]   The effect of ion energy on the chemistry of air-aged polymer films grown from the hyperthermal polyatomic ion Si2OMe5+ [J].
Brookes, PN ;
Fraser, S ;
Short, RD ;
Hanley, L ;
Fuoco, E ;
Roberts, A ;
Hutton, S .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2001, 121 (1-3) :281-297
[3]  
Fichou D, 1999, HDB OLIGO POLYTHIOPH, P185
[4]   Large fluorocarbon ions can contribute to film growth during plasma etching of silicon [J].
Fuoco, ER ;
Hanley, L .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :37-44
[5]   Surface analysis studies of yield enhancements in secondary ion mass spectrometry by polyatomic projectiles [J].
Fuoco, ER ;
Gillen, G ;
Wijesundara, MBJ ;
Wallace, WE ;
Hanley, L .
JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (18) :3950-3956
[6]   VIBRATIONAL KEY BANDS AND ELECTRICAL-CONDUCTIVITY OF POLYTHIOPHENE [J].
FURUKAWA, Y ;
AKIMOTO, M ;
HARADA, I .
SYNTHETIC METALS, 1987, 18 (1-3) :151-156
[7]  
GRANSTROM M, 1999, HDB OLIGO POLYTHIOPH, P405
[8]   The growth and modification of materials via ion-surface processing [J].
Hanley, L ;
Sinnott, SB .
SURFACE SCIENCE, 2002, 500 (1-3) :500-522
[9]   Energetics, timescales, and chemistry of low energy molecular ion-organic surface collisions [J].
Hanley, L ;
Lim, H ;
Schultz, DG ;
Garbis, S ;
Yu, CW ;
Ada, ET ;
Wijesundara, MBJ .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 157 (1-4) :174-182
[10]  
HANLEY L, 2003, IN PRESS NUCL INSTRU