An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices

被引:0
作者
Fan, Lin [1 ]
Lumby, Christian K. [1 ]
Knott, Arnold [1 ]
Jorgensen, Ivan Harald Holger [1 ]
机构
[1] Tech Univ Denmark, Dept Elect Engn, Lyngby, Denmark
来源
2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA) | 2018年
关键词
DC-DC converter; switched-capacitor; multilevel; asynchronous; mains voltage; high characteristic impedance; gallium nitride; silicon carbide; wide bandgap devices; CONVERSION;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
For the state-of-the-art switched-capacitor DC-DC converters at high-voltage low-power levels, switching loss becomes a major concern and challenge. Existing switching schemes operate power semiconductors at a single common frequency, which does not optimally address the switching losses, especially for a high-conversion-ratio design. This paper presents a concept of Asynchronous-Switched-Capacitor (ASC), which is applied to the GaN switches that are combined with the SiC diodes to improve the efficiency and the power density. Two stages of switched-capacitors are operating with uncorrelated frequencies, without phase and clock synchronization of the control signals. A 380 V, 6 W, 4:1 conversion ratio converter experimentally validates the concept. The efficiency is improved by 4 % and the peak-to-peak output voltage ripple is reduced by 39 %, with the proposed ASC switching compared to a synchronous operation. A peak efficiency of 95.4 % is achieved.
引用
收藏
页码:95 / 99
页数:5
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