Design and performance analysis of low power LNA with variable gain current reuse technique

被引:5
作者
Kalra, Dheeraj [1 ,2 ]
Goyal, Vishal [2 ]
Srivastava, Mayank [1 ]
机构
[1] Natl Inst Technol, Dept ECE, Jamshedpur, Bihar, India
[2] GLA Univ, Dept ECE, Mathura, India
关键词
Low noise amplifier (LNA); Noise figure (NF); Current steering circuit; Current reuse; LOW-NOISE AMPLIFIER; COMPLIMENTARY COMMON GATE; CMOS LNA; INDUCTORLESS LNA; FEEDBACK;
D O I
10.1007/s10470-021-01855-6
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a CMOS low power Variable Gain Low Noise Amplifier for 26-34 GHz in 45 nm process technology, which composes of cascaded complimentary common gate (CCG) stage and digital current steering amplifier. First stage is CCG stage, which helps in achieving the low power consumption and less area. Second stage is variable gain amplifier, uses current reuse technique as well as g(m)-boost technique and has constant dc current to make the input impedance stable. Source degeneration technique cancel out MOS parasitic capacitance help in achieving linearity. Simulated maximum peak gain is 13.139 dB at 30.57 GHz and lowest peak gain is 7.75 dB at 26 GHz i.e. approximately flat over the entire band. Lowest NF is 3.08 dB at 32.6 GHz. Process corner simulation has been done for all four corners (S-S, S-F, F-S, F-F) showing robustness of LNA. Input return loss has value less than - 9.58 dB while output return loss has less than - 2.6 dB showing good matching; power consumption is 16 mW for dc current of 16 mA at 1 V. MOS active chip area is 76.727 mu m(2).
引用
收藏
页码:351 / 361
页数:11
相关论文
共 32 条
  • [1] A 5-7 GHz current reuse and gm-boosted common gate low noise amplifier with LC based ESD protection in 32 nm CMOS
    Ankathi, Sriharsha
    Vignan, Sriramula
    Athukuri, Srikanth
    Mohan, Smrithi
    Balamurugan, Karthigha
    Devi, M. Nirmala
    [J]. ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2017, 90 (03) : 573 - 589
  • [2] [Anonymous], 2016, DESIGN ANALOG CMOS I
  • [3] [Anonymous], ANALOG INTEGR CIRC S, P1
  • [4] A Low Power Inductorless LNA With Double Gm Enhancement in 130 nm CMOS
    Belmas, Francois
    Hameau, Frederic
    Fournier, Jean-Michel
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (05) : 1094 - 1103
  • [5] Low-Area Active-Feedback Low-Noise Amplifier Design in Scaled Digital CMOS
    Borremans, Jonathan
    Wambacq, Piet
    Soens, Charlotte
    Rolain, Yves
    Kuijk, Maarten
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (11) : 2422 - 2433
  • [6] Wide-band CMOS low-noise amplifier exploiting thermal noise canceling
    Bruccoleri, F
    Klumperink, EAM
    Nauta, B
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (02) : 275 - 282
  • [7] 0.99 mW 3-10 GHz common-gate CMOS UWB LNA using T-match input network and self-body-bias technique
    Chang, J. -F.
    Lin, Y. -S.
    [J]. ELECTRONICS LETTERS, 2011, 47 (11) : 658 - U44
  • [8] A V-Band Low-Power Digital Variable-Gain Low-Noise Amplifier Using Current-Reused Technique With Stable Matching and Maintained OP1dB
    Chang, Yu-Teng
    Lu, Hsin-Chia
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2019, 67 (11) : 4404 - 4417
  • [9] Chou HT, 2013, IEEE MTT S INT MICR
  • [10] A Millimeter-Wave (23-32 GHz) Wideband BiCMOS Low-Noise Amplifier
    El-Nozahi, Mohamed
    Sanchez-Sinencio, Edgar
    Entesari, Kamran
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (02) : 289 - 299