Impact Ionization Coefficients in (AlxGa1-x)0.52In0.48P and AlxGa1-xAs Lattice-Matched to GaAs

被引：5

作者：

Lewis, Harry I. J. ^{[1
]}

Qiao, Liang ^{[1
]}

Cheong, Jeng Shiuh ^{[1
]}

Baharuddin, Aina N. A. P. ^{[1
]}

Krysa, Andrey B. ^{[1
]}

Ng, Beng Koon ^{[2
]}

Green, James E. ^{[1
]}

David, John P. R. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

AlGaAs; AlGaInP; avalanche breakdown; avalanche photodiodes (APDs); excess noise; GaAs; impact ionization; EXCESS NOISE; AVALANCHE; DEPENDENCE; BREAKDOWN; GAP;

D O I：

10.1109/TED.2021.3086800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact ionization characteristics of (AlxGa1-x)(0.52)In0.48P have been studied comprehensively across the full composition range. Electron and hole impact ionization coefficients (alpha and beta, respectively) have been extracted from avalanche multiplication and excess noise data for seven different compositions and compared to those of AlxGa1-xAs. While both alpha and beta initially decrease gradually with increasing bandgap, a sharp decrease in beta occurs in (AlxGa1-x)(0.52)In0.48P when x > 0.61 , while alpha decreases only slightly. alpha and beta decrease minimally with further increases in x and the breakdown voltage saturates. This behavior is broadly similar to that seen in AlxGa1-xAs, suggesting that it may be related to the details of the conduction band structure as it becomes increasingly indirect in both alloy systems.

引用

页码：4045 / 4050

页数：6

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