Magneto-tunable photoresponse in ZnO-rGO/La0.7Sr0.3MnO3/ITO heterostructure: An opto-spintronic phenomenon

被引：13

作者：

Deb, Debajit ^{[1
,2
,7
]}

Nath, Debarati ^{[3
]}

Choudhary, R. J. ^{[4
]}

Roy, J. N. ^{[5
,6
]}

Dey, P. ^{[5
,6
]}

机构：

[1] Techno Coll Engn Agartala, Dept Elect & Commun Engn, Agartala 799004, Tripura, India

[2] Natl Inst Technol Agartala, Dept Phys, Agartala 799046, Tripura, India

[3] Chandigarh Univ, Dept Elect & Commun Engn, Mohali 140413, Punjab, India

[4] UGC DAE Consortium Sci Res CSR, Univ Campus,Khandwa Rd, Indore 452001, India

[5] Kazi Nazrul Univ, Dept Phys, Asansol 713340, WB, India

[6] Kazi Nazrul Univ, Ctr Organ Spintron & Optoelect Devices, Asansol 713340, WB, India

[7] Koneru Lakshmaiah Educ Fdn Deemed Univ, Dept Elect & Commun Engn, Vaddeswaram 522502, Andhra Pradesh, India

来源：

PHYSICS LETTERS A | 2022年 / 446卷

关键词：

Spin resolved band structure; Spin dependent scattering; Exciton dissociation; Defect states; Depletion width modification;

D O I：

10.1016/j.physleta.2022.128271

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated both red light (660 nm) and magnetic field (H) dependent carrier transport properties of ZnO-rGO/La0.7Sr0.3MnO3(LSMO)/ITO heterostructure at room temperature. H dependent current-voltage (I-V) response shows positive magnetoresistance behavior over the entire applied bias region. This phenomenon is attributed to larger spin dependent scattering of electrons at t2g down arrow band of LSMO depletion region with increase in H. Enhancement in device current with light intensity, at positive bias region and zero applied H, is supposed to be associated with dissociation of excitons at ZnO-rGO granular interface, ZnO-rGO/LSMO depletion region and LSMO active layer of the device. Device current is suddenly observed to decrease with light intensity at higher constant applied H of 1 kOe. Simultaneous light and magnetic field dependent modification of ZnO-rGO/LSMO depletion region is supposed to be the origin of such reversal of light dependent device current behavior at high magnetic field. (c) 2022 Elsevier B.V. All rights reserved.

引用

页数：9

共 36 条

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