Room-temperature photoluminescence from ZnO/ZnMgO multiple quantum wells grown on Si(111) substrates

被引：51
作者：
Gu, X. Q.
Zhu, L. P. [1 ]
Ye, Z. Z.
He, H. P.
Zhang, Y. Z.
Huang, F.
Qiu, M. X.
Zeng, Y. J.
Liu, F.
Jaeger, W.
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Univ Kiel, Fac Engn, D-24143 Kiel, Germany
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 02期
关键词：
D O I：
10.1063/1.2755922
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A set of ten-period ZnO/Zn0.85Mg0.15O multiple quantum wells with well thickness varying from 2.5 to 5 nm has been grown on Si(111) substrates by pulsed laser deposition. A periodic structure with sharp interfaces was observed by cross-sectional transmission electron microscopy. The room-temperature photoluminescence resulting from the well regions exhibits a significant blueshift with respect to the ZnO single layer. The well layer thickness dependence of the emission energy from the well regions was investigated and compared with a simple theoretical model. The results suggest that the quantum confinement effects in the quantum wells can be observed up to room temperature. (C) 2007 American Institute of Physics.
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页数：3
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