X-ray photoelectron spectroscopy study of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond

被引：19

作者：

Li, Fengnan ^{[1
,2
]}

Zhang, Jingwen ^{[1
]}

Wang, Xiaoliang ^{[1
]}

Liu, Zhangcheng ^{[3
]}

Wang, Wei ^{[3
]}

Li, Shuoye ^{[3
]}

Wang, Hong-Xing ^{[3
]}

机构：

[1] Xi An Jiao Tong Univ, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China

[2] Xi An Jiao Tong Univ, Shaanxi Key Lab Photon Technol Informat, Xian 710049, Peoples R China

[3] Xi An Jiao Tong Univ, Inst Wide Band Gap Semicond, Xian 710049, Peoples R China

来源：

关键词：

CVD diamond; Fluorine-terminated; Schottky junctions; XPS; SURFACES; DEVICES;

D O I：

10.1016/j.diamond.2015.12.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, investigation of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond (O-/F-diamond) film has been carried out. Both of the O-/F-diamond surfaces have been formed on different areas of one (100) diamond sample by O-2 and CF4 plasma. Metals of Au, Pd, and Cu have been evaporated on the diamond surfaces to form Schottky junctions, whose barrier heights on O-/F-diamond have been investigated by X-ray photoelectron spectroscopy technique, the results of which indicate that the barrier heights of the metals on O-diamond are about 1.70 eV, and those on F-diamond are about 230 eV, respectively. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：180 / 185

页数：6

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