Molecular beam epitaxy growth and characterisation of (AlGa)InP using GaP as a phosphorus source

被引：4

作者：

Najda, SP ^{[1
]}

Kean, AH ^{[1
]}

机构：

[1] Sharp Labs Europe Ltd, Oxford OX4 4GA, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 217卷 / 04期

关键词：

MBE growth; GaP; photoluminescence;

D O I：

10.1016/S0022-0248(00)00489-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

(Al,Ga,In)P is grown by molecular beam epitaxy using gallium phosphide (GaP) as a source of phosphorus. Photoluminescence from the phosphide material is compared to material using phosphine as the phosphorus source. High quality, disordered (AI,Ga,In)P can be grown using GaP, but additional impurities are observed in phosphide material grown by the GaP cell as compared to gas source material. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：345 / 348

页数：4

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