Electrical resistivity and magnetic susceptibility of substoichiometric CdO and In doped CdO films

Undoped and In doped substoichiometric CdO nanostructured films were prepared via vapor transport method. Mixed phases of hexagonal Cd and cubic CdO were obtained. No peaks related to In or indium oxides were observed in the In doped CdO pattern. Net-like assembles of nanowires were observed for undoped CdO sample whereas a regular morphology of equally shaped grains was observed for In doped CdO sample. The evaluated room temperature electrical resistivity values for undoped and In doped CdO films were 1.56 x 10(2) and 2.31 x 10(-2) omega cm, respectively. The temperature dependent resistivity measurements elucidated the semiconducting behavior for undoped CdO films, whereas a semiconductor-metal with a transition around 367 K was obtained for In doped CdO film. The magnetic susceptibility showed paramagnetic-antiferromagnetic transition with Neel temperatures of 266 and 308 for undoped and In doped CdO samples, respectively.