Photoluminescence dynamics in GaAs along an optically induced Mott transition

被引：19

作者：

Amo, A.

Martin, M. D.

Vina, L. ^{[1
]}

Toropov, A. I.

Zhuravlev, K. S.

机构：

[1] Univ Autonoma Madrid, SEMICUAM, Dept Fis Mat, E-28049 Madrid, Spain

[2] Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 08期

关键词：

D O I：

10.1063/1.2722786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a detailed experimental study of the effects of the optically induced transition from the excitonic, insulating regime, to the plasma, metallic regime, on the spectra and on the photoluminescence dynamics of GaAs. The transition is rather abrupt and presents a Mott-like behavior. The critical temperature, of 49 K, corresponds to the exciton binding energy. Through the study of the characteristics of the photoluminescence dynamics, the critical density for the transition has been obtained with unprecedented resolution.

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页数：5

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