The role of AlGaN buffers and channel thickness in the electronic transport properties of Al x In1-x N/AlN/GaN heterostructures

We try to theoretically analyze the reported experimental data of the Al (x) In1-x N/AlN/GaN heterostructures grown by MOCVD and quantitatively investigate the effects of AlGaN buffers and the GaNchannel thickness on the electrical transport properties of these systems. Also, we obtain the most important effective parameters of the temperature-dependent mobility in the range 35-300 K. Our results show that inserting a 1.1 mu m thick Al0.04Ga0.96N buffer enhances electron mobility by decreasing the effect of phonons, the interface roughness, and dislocation and crystal defect scattering mechanisms. Also, as the channel thickness increases from 20 nm to 40 nm, the electron mobility increases from 2200 to 2540 cm(2)/(V s) and from 870 to 1000 cm(2)/(V s) at 35 and 300 K respectively, which is attributed to the reduction in the dislocation density and the strain-induced field. Finally, the reported experimental data show that inserting a 450 nm graded AlGaN layer before an Al0.04Ga0.96N buffer causes a decrease in the electron mobility, which is attributed to the enhancement of the lateral size of roughness, the dislocation density, and the strain-induced field in this sample.