A laterally resolved DLTS study of intrinsic defect diffusion in 4H-SiC after low energy focused proton beam irradiation

4H-SiC has been irradiated with 10 keV protons and a laterally resolved DLTS study performed to study the diffusion of irradiation induced intrinsic point defects. It is found that the defects migrate on the order of hundreds of mu m laterally and carbon interstitials (C(1)) are believed to be involved in the defect formation. However, the vertical diffusion lengths are revealed to be several orders of magnitude shorter, on the order of hundreds of nm. Specifically, the Z(1,2), S(1,2) and EH(6,7) levels are found to be generated significant distances from the irradiated area, suggesting that C(1) or another highly mobile species are involved in the formation of these defects.