Electric Resistivity Measurements of Sb2Te3 and Ge2Sb2Te5 Melts Using Four-Terminal Method

被引：36

作者：

Endo, Rie ^{[1
]}

Maeda, Shimpei ^{[1
]}

Jinnai, Yuri ^{[1
]}

Lan, Rui ^{[1
]}

Kuwahara, Masashi ^{[2
]}

Kobayashi, Yoshinao ^{[1
]}

Susa, Masahiro ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan

[2] Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 06期

基金：

日本学术振兴会;

关键词：

PHASE-CHANGE MATERIALS; LIQUID-SEMICONDUCTORS; THERMAL-CONDUCTIVITY; TEMPERATURE; DEPENDENCE; SILICON; ALLOYS; MOLTEN; FILMS; TIN;

D O I：

10.1143/JJAP.49.065802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we aim to determine the electric resistivities of liquid Sb2Te3 and Ge2Sb2Te5. Electric resistivities were measured using the four-terminal method. First, the electric resistivities of liquid Ga and Sn were measured to establish this method. Second, the electric resistivities of Sb2Te3 and Ge1.6Sb2.0Te5.0 were measured over temperature ranges between the respective melting temperatures of samples and 1020 K. The electric resistivity of Sb2Te3 has been determined to be 4.36 +/- 0.14 mu Omega m at 992 K. The uncertainty was determined on the basis of the guide to the expression of uncertainty in measurement. The electric resistivity of Ge1.6Sb2.0Te5.0 is smaller than that of Sb2Te3. It is also found that both resistivities decrease with an increase in temperature; which indicates that both liquid materials behave as a semiconductor. Therefore, the pseudogap model was applied to derive the electrical activation energies. (C) 2010 The Japan Society of Applied Physics

引用

页码：0658021 / 0658027

页数：7

共 31 条

[1] Density functional study of amorphous, liquid and crystalline Ge2Sb2Te5: homopolar bonds and/or AB alternation? [J].