Microstructural, dielectric and ferroelectric properties of Sr0.8Bi2.15Ta2O9 ceramics synthesized by microwave processing technique

Sr0.8Bi2.15Ta2O9 (SBT) ceramics were synthesized by microwave-assisted solid-state reaction route. SBT ceramics were sintered at three different temperatures namely 1050 degrees C, 1100 degrees C and 1150 degrees C for 30 min, respectively. XRD study confirmed the retention of single phase of SBT ceramics sintered at 1050 degrees C and 1100 degrees C. Plates like with non-uniform distribution of grains were observed from the FESEM study. Dielectric constant and dielectric loss were found to decrease with the increase of sintering temperature. From room temperature P-E loop study, remnant polarization and coercive field were found to increase with the increase in sintering temperature. From the J-E plot study, leakage current was found to decrease with the increase in sintering temperature. Minimal degradation of polarization was obtained from fatigue characteristics. SBT ceramics sintered at 1100 degrees C show better ferroelectric properties and make it suitable for memory applications.