The photoluminescence properties of TiO2-sheathed ZnSe nanowires

被引：15
作者：
Lee, Chongmu [1 ]
Jin, Changhyun [1 ]
Kim, Hyunsoo [1 ]
Kim, Hyoun Woo [1 ]
机构：
[1] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea
来源：
CURRENT APPLIED PHYSICS | 2010年 / 10卷 / 04期
关键词：
Photoluminescence; ZnSe nanowires; ZnSe/TiO2 coaxial nanowires; Branch nanowires; Thermal evaporation; DEPOSITION;
D O I：
10.1016/j.cap.2009.12.032
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnSe nanowires have been synthesized by thermal evaporation of ZnSe powders on gold-coated Al2O3( 0 0 0 1) substrates and then sheathed with TiO2 by sputtering. Our results show that sheathing Zn nanowires with thin TiO2 layers can significantly enhance the photoluminescence (PL) emission intensity. XPS analysis results suggest that the PL enhancement is attributed to increases in the concentrations of deep levels such as oxygen and titanium interstitials as well as the density of interface states. The PL emission of ZnSe nanowires is also enhanced by thermal annealing. Annealing in an argon atmosphere is more efficient in enhancing the PL emission than annealing in an oxygen atmosphere. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1017 / 1021
页数：5
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