Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

被引：15

作者：

Lehmann, Steffen ^{[1
]}

Zimmermann, Yves ^{[1
]}

Pawlak, Andreas ^{[1
]}

Schroeter, Michael ^{[1
,2
]}

机构：

[1] Tech Univ Dresden, Chair Electron Devices & Integrated Circuits, D-01069 Dresden, Germany

[2] Univ Calif San Diego, Dept Elect & Commun Engn, La Jolla, CA 92093 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 11期

关键词：

Self-heating; SiGe-HBT modeling; temperature-dependent thermal conductivity; thermal coupling; DESIGN; TEMPERATURE; DEPENDENCE; RESISTANCE; EXTRACTION; MODEL;

D O I：

10.1109/TED.2014.2359994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A strategy for compact modeling the static thermal coupling between the emitter fingers of SiGe heterojunction bipolar transistors (SiGe-HBTs) is described. An extraction methodology that includes the nonlinear temperature dependence of the thermal conductivity is introduced and applied to suitable test structures. The experimental results are used for calibrating a 3-D numerical solution of the equation for heat conduction based on a Green's function approach. The latter can then be employed for generating thermal coupling networks for arbitrary transistor configurations.

引用

页码：3676 / 3683

页数：8

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