Selective growth of uniform single-layer graphene on Cu foil and fabrication of damage-free field effect transistor combining with direct transfer

During selective growth of graphene by using silicon dioxide (SiO2) patterns on Cu foil (SOCF), multilayer graphene was grown on SOCF under the same conditions that are used to synthesize single-layer graphene (SLG) on blank Cu foil. The authors demonstrated that oxygen (O-2) species that can be released from the SiO2 film did not affect the layer increase and that the SiO2 film of SOCF reduced the area of the exposed Cu surface and thereby increased the relative concentration of hydrogen (H-2) to the Cu surface and initially grown graphene; as a result, extra graphene layers grew on SOCF. By adjusting the H-2 supply and SiO2 coverage, uniformly-grown SLG patterns were obtained on SOCF. A damage-free graphene field effect transistor (GFET) was fabricated using selectively-grown SLG and direct transfer using parylene-C. The field effect mobility of the GFET was 7538.81 cm2/(V s), which is quite high compared to those of chemical vapor deposition based GFETs on flexible substrates that have been reported. (c) 2019 Author(s).