Preparation and characterization of lead zirconate titanate thin films on si substrate by metal-organic chemical vapor deposition

被引：4

作者：

Sakurai, A ^{[1
]}

Nakaiso, T ^{[1
]}

Nishida, K ^{[1
]}

Ando, A ^{[1
]}

Sakabe, Y ^{[1
]}

机构：

[1] Murata Mfg Co Ltd, Nagaoka, Niigata 6170824, Japan

来源：

ELECTROCERAMICS IN JAPAN VII | 2004年 / 269卷

关键词：

metal-organic chemical vapor deposition; lead zirconate titanate; thin film; gradient-composition layer; Si;

D O I：

10.4028/www.scientific.net/KEM.269.61

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of a gradient-composition lead zirconate titanate (PZT) layer functioning as a buffer layer and having a Zr/(Zr+Ti) ratio of from 10 to 50 atomic % to prepare PZT dim films was investigated. [001]-oriented PZT films were prepared on (111)Pt/Ti/SiO2/Si substrates with gradient-composition PZT layers by metal-organic chemical vapor deposition (MOCVD). A post-annealing process improved the insulation resistance and crystallinity of the films with buffer layers. They had a dielectric constant of 948, a dielectric loss of 6.7%, a remanent polarization of 23 muC/cm(2), a coercive field of 35 kV/cm, and a piezoelectric constant (d(31)) of -136 pC/N.

引用

页码：61 / 64

页数：4

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