Effects of laser annealing on the electrical characteristics of dynamic random access memory using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 thin films

被引：8

作者：

Chen, Kai-Huang ^{[1
]}

Chen, Ying-Chung

Yang, Cheng-Fu

Chen, Zhi-Sheng

Chang, Ting-Chang

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

[2] Natl Univ Jaohsiung, Dept Chem & Mat Engn, Kaohsiung 800, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 7A期

关键词：

BSTZ films; excimer laser annealing; leakage current density; dielectric constant; DRAMs;

D O I：

10.1143/JJAP.46.4197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(Ba0.7Sr0.3)(Ti0.9Zr0.1)O-3 (BSTZ) films are deposited on a Pt/Ti/SiO2/Si Substrate at room temperature. KrF excimer laser annealing (ELA) technology is used to treat the BSTZ films, and the effect of laser energy power on the dielectric and electrical characteristics of ELA-treated BSTZ films is investigated in this study. Atomic force microscopy (AFM) observation shows that the BSTZ films decrease in roughness as the laser energy power increases. The leakage current density of ELA-treated BSTZ films markedly decreases as the laser energy power increases from 0 mJ/cm(2) (no ELA treatment) to 200 mJ/cm(2), and it decreases slightly as the laser power is further increased. The dielectric constants of ELA-treated BSTZ films first increase, reach a maximum, and then slightly decrease with increasing of laser energy power.

引用

页码：4197 / 4199

页数：3

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