Effect of crystalline defects on domain wall motion under field and current in nanowires with perpendicular magnetization

被引：18

作者：

Garcia-Sanchez, F. ^{[1
]}

Szambolics, H. ^{[1
,2
]}

Mihai, A. P. ^{[3
,4
]}

Vila, L. ^{[3
,4
]}

Marty, A. ^{[3
,4
]}

Attane, J. -P. ^{[3
,4
]}

Toussaint, J. -Ch. ^{[2
,5
]}

Buda-Prejbeanu, L. D. ^{[1
]}

机构：

[1] UJF Grenoble 1, Grenoble INP, CNRS, CEA INAC,SPINTEC,UMR 8191, F-38054 Grenoble 9, France

[2] CNRS, Inst Neel, F-38042 Grenoble, France

[3] CEA, Inac, SP2M, F-38054 Grenoble, France

[4] Univ Grenoble 1, F-38041 Grenoble, France

[5] Inst Polytech Grenoble, F-38031 Grenoble, France

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.81.134408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we present a micromagnetic study of a magnetic domain wall dynamics influenced by magnetic fields and/or spin-polarized currents in systems characterized by perpendicular magnetization including crystalline defects. The dynamics in two different systems is studied: one showing the effect of defects in the flow regime, and the second one presenting the thermally activated depinning from a single defect. In the latter case, the thermal depinning can be analyzed within the framework of a single energy barrier process. In such situation, the current density can be assimilated to an applied field. We found that the energy barrier depends linearly on the applied field and on the injected current.

引用

页数：7

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