Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

被引：13

作者：

Barhate, Viral ^{[1
]}

Agrawal, Khushabu ^{[1
]}

Patil, Vilas ^{[1
]}

Patil, Sumit ^{[1
]}

Mahajan, Ashok ^{[1
]}

机构：

[1] North Maharashtra Univ, Dept Elect, Jalgaon 425001, MS, India

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2018年 / 32卷 / 19期

关键词：

La2O3; PEALD; semiconductor; XPS; ELECTRICAL-PROPERTIES; CMOS TECHNOLOGY;

D O I：

10.1142/S021797921840074X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (ID-PEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O-2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The similar to 1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3(+) oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.

引用

页数：5

共 12 条

[1] Total conductivity in Sc-doped LaTiO3+δ perovskites [J].

Bradha, M. ;

Hussain, S. ;

Chakravarty, Sujay ;

Amarendra, G. ;

Ashok, Anuradha .

IONICS, 2014, 20 (09) :1343-1350

[2] Silicon carbide benefits and advantages for power electronics circuits and systems [J].

Elasser, A ;

Chow, TP .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :969-986

[3] Atomic-scale simulation of ALD chemistry [J].

Elliott, Simon D. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (07)

[4] Challenges of 22 nm and beyond CMOS technology [J].

Huang Ru ;

Wu HanMing ;

Kang JinFeng ;

Xiao DeYuan ;

Shi XueLong ;

An Xia ;

Tian Yu ;

Wang RunSheng ;

Zhang LiangLiang ;

Zhang Xing ;

Wang YangYuan .

SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES, 2009, 52 (09) :1491-1533

[5]

KHAIRNAR AG, 2013, J NANO ELECTRON PHYS, V5

[6] Sol-gel deposited ceria thin films as gate dielectric for CMOS technology [J].

Khairnar, Anil G. ;

Mahajan, Ashok M. .

BULLETIN OF MATERIALS SCIENCE, 2013, 36 (02) :259-263

[7] Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone [J].

Lee, B. ;

Park, T. J. ;

Hande, A. ;

Kim, M. J. ;

Wallace, R. M. ;

Kim, J. ;

Liu, X. ;

Yi, J. H. ;

Li, H. ;

Rousseau, M. ;

Shenai, D. ;

Suydam, J. .

MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1658-1661

[8] Electrical properties of the La2O3/4H-SiC interface prepared by atomic layer deposition using La(iPrCP)3 and H2O [J].

Moon, Jeong Hyun ;

Il Eom, Da ;

No, Sang Yong ;

Song, Ho Keun ;

Yim, Jeong Hyuk ;

Na, Hoon Joo ;

Lee, Jae Bin ;

Kim, Hyeong Joon .

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 :1083-+

[9] Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing [J].

van Delft, J. A. ;

Garcia-Alonso, D. ;

Kessels, W. M. M. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (07)

[10] Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer [J].

Wang, Xing ;

Liu, Hong-Xia ;

Fei, Chen-Xi ;

Yin, Shu-Ying ;

Fan, Xiao-Jiao .

NANOSCALE RESEARCH LETTERS, 2015, 10

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