共 54 条
Kinetics of Domain Alignment in Block Polymer Thin Films during Solvent Vapor Annealing with Soft Shear: An in Situ Small-Angle Neutron Scattering Investigation
被引:14
作者:
Shelton, Cameron K.
[1
]
Jones, Ronald L.
[3
]
Epps, Thomas H., III
[1
,2
]
机构:
[1] Univ Delaware, Dept Chem & Biomol Engn, Newark, DE 19716 USA
[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
[3] NIST, Mat Sci & Engn Div, Gaithersburg, MD 20899 USA
基金:
美国国家科学基金会;
美国国家卫生研究院;
关键词:
HUGGINS INTERACTION PARAMETERS;
ELECTRIC-FIELD ALIGNMENT;
COPOLYMER FILMS;
MICROSCOPIC MECHANISM;
ORIENTATIONAL ORDER;
LARGE-AREA;
X-RAY;
NANOSTRUCTURE;
MORPHOLOGY;
ARRAYS;
D O I:
10.1021/acs.macromol.7b00876
中图分类号:
O63 [高分子化学(高聚物)];
学科分类号:
070305 ;
080501 ;
081704 ;
摘要:
We employed small-angle neutron scattering (SANS) to identify the kinetic pathways between disordered and ordered states in block polymer (BP) thin films subjected to solvent vapor annealing with soft shear (SVA-SS), which enabled the optimization of large-scale nanostructure ordering and alignment. The judicious incorporation of deuteration in poly(deuterated styrene-b-isoprene-b-deuterated styrene) (dSIdS) films (approximate to 200 nm thick) provided sufficient contrast in the SANS experiments to overcome the diffuse scattering contribution from thicker (nondeuterated) polydimethylsiloxane (PDMS) pads (approximate to 500 mu m thick) and permit the in situ tracking of BP nanostructure responses to swelling, deswelling, and shear forces. We determined that as the dSIdS and PDMS swelled during SVA-SS, the lateral expansion of the PDMS across the pinned film induced a shear force that promoted chain mixing and nanostructure disordering in our solvent swollen systems. As solvent was removed from the films (deswelling), smaller grains began to form that had lower energetic barriers to alignment in the direction of the drying front(s), which facilitated nanostructure alignment. Changing SVA-SS parameters such as swelling ratio, PDMS elasticity, and deswell rate altered the ordering kinetics and affected domain directionality Over a length scale that was readily captured through SANS studies. By exploiting SVA-SS parameters that create large and controllable shear forces, we also developed a robust and "hands-off" approach to direct BP thin film self-assembly using gradient thickness PDMS pads in SVA-SS. This proposed technique can be applied to quickly and reliably generate cost-effective microscopic patterns over macroscopic areas for both nanotechnology research and industrial applications.
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页码:5367 / 5376
页数:10
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