Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs

被引：88

作者：

Abd El Hamid, Hamdy ^{[1
]}

Guitart, Jaume Roig

Iniguez, Benjamin

机构：

[1] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain

[2] CNRS, Lab Anal & Architecture Syst, F-31077 Toulouse 4, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 06期

关键词：

device modeling; double gate (DG); downscaling; drain induced barrier lowering (DIBL); MOSFET; subthreshold swing; threshold voltage;

D O I：

10.1109/TED.2007.895856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed analytical physically based models for the threshold voltage [including the drain-induced barrier lowering (DIBL) effect] and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs. The models are derived from an analytical solution of the 2-D Poisson equation in which the electron concentration was included. The models for DIBL, subthreshold swing, and threshold voltage roll-off have been verified by comparison With 2-D numerical simulations for different values of channel length, channel thickness, and drain-source voltage; very good agreement with the numerical simulations has been observed.

引用

页码：1402 / 1408

页数：7

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