Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs

被引：87

作者：

Abd El Hamid, Hamdy ^{[1
]}

Guitart, Jaume Roig

Iniguez, Benjamin

机构：

[1] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain

[2] CNRS, Lab Anal & Architecture Syst, F-31077 Toulouse 4, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 06期

关键词：

device modeling; double gate (DG); downscaling; drain induced barrier lowering (DIBL); MOSFET; subthreshold swing; threshold voltage;

D O I：

10.1109/TED.2007.895856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed analytical physically based models for the threshold voltage [including the drain-induced barrier lowering (DIBL) effect] and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs. The models are derived from an analytical solution of the 2-D Poisson equation in which the electron concentration was included. The models for DIBL, subthreshold swing, and threshold voltage roll-off have been verified by comparison With 2-D numerical simulations for different values of channel length, channel thickness, and drain-source voltage; very good agreement with the numerical simulations has been observed.

引用

页码：1402 / 1408

页数：7

共 50 条

[31] Two-dimensional model for double-gate LDMOSFET devices [J].

El-Dakroury, Mohamed M. ;

Nosseir, Zaki ;

Ismail, Yehea I. ;

Abdelhamid, Hamdy .

JOURNAL OF COMPUTATIONAL ELECTRONICS, 2019, 18 (03) :882-892

[32] Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs [J].

Ekta Goel ;

Balraj Singh ;

Sanjay Kumar ;

Kunal Singh ;

Satyabrata Jit .

Indian Journal of Physics, 2017, 91 :383-390

[33] Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs [J].

Goel, E. ;

Singh, B. ;

Kumar, S. ;

Singh, K. ;

Jit, S. .

INDIAN JOURNAL OF PHYSICS, 2017, 91 (04) :383-390

[34] Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor with dual-material gate [J].

Wang, Ping ;

Zhuang, Yiqi ;

Li, Cong ;

Liu, Yuqi ;

Jiang, Zhi .

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2016, 29 (02) :230-242

[35] A Doping-Dependent Subthreshold Current Model for Short-Channel Symmetric Double-Gate (DG) MOSFETs [J].

Tiwari, Pramod Kumar ;

Jit, S. .

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2010, 5 (01) :82-88

[36] Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET [J].

Fan Min-Min ;

Xu Jing-Ping ;

Liu Lu ;

Bai Yu-Rong ;

Huang Yong .

ACTA PHYSICA SINICA, 2014, 63 (08)

[37] Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model [J].

Schwarz, Mike ;

Holtij, Thomas ;

Kloes, Alexander ;

Iniguez, Benjamin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (02) :884-886

[38] Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor [J].

Akarvardar, Kerem ;

Cristoloveanu, Sorin ;

Gentil, Pierre .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (10) :2569-2577

[39] An analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel FinFET [J].

N. P. Maity ;

Reshmi Maity ;

Srimanta Baishya .

Journal of Computational Electronics, 2019, 18 :65-75

[40] Analytical Model for RDF-Induced Threshold Voltage Fluctuations in Double-Gate MOSFET [J].

Sriram, S. R. ;

Bindu, B. .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2019, 19 (02) :370-377

← 1 2 3 4 5 →