A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor

被引：9
作者：
Ge, Lei [1 ]
Peng, Yan [1 ]
Li, Bin [1 ]
Chen, Xiaohua [1 ]
Xu, Mingsheng [1 ]
Wang, Xiwei [1 ]
Cui, Yingxin [1 ]
Wang, Dufu [2 ]
Han, Jisheng [1 ]
Cheong, Kuan Yew [3 ]
Tanner, Philip [4 ]
Zhao, Ming [5 ]
Xu, Xiangang [1 ]
机构：
[1] Shandong Univ, Inst Novel Semicond Mat, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Jinan Diamond Technol Co Ltd, Jinan 250100, Peoples R China
[3] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Nibong Tebal 14300, Penang, Malaysia
[4] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia
[5] Interuniv Microelect Ctr IMEC, B-3001 Leuven, Belgium
来源：
IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 08期
关键词：
Diamond; field effect transistor; solar blind phototransistor; high photoresponsivity; UV PHOTODETECTOR;
D O I：
10.1109/LED.2022.3180845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance solar-blind phototransistor, which is based on hydrogen-terminated diamond was fabricated and reported. The fabricated phototransistor was based on metal-semiconductor field effect transistor architecture with a high photoresponsivity (2.48x 10(4) A/W), high external quantum efficiency (1.44 x 10(5)), and high detectivity (5.08 x 10(9) Jones) under 213-nm light illumination (437 W/m(2)). At 5240 W/m(2) light illumination, the change in drain current exceeds six orders of magnitude. Through transient response measurement, the rise/decay time of the phototransistor is about 88 / 36 ms and there is no significant persistent photoconductive effect.
引用
收藏
页码：1271 / 1274
页数：4
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