A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor

被引：9
|
作者：
Ge, Lei [1 ]
Peng, Yan [1 ]
Li, Bin [1 ]
Chen, Xiaohua [1 ]
Xu, Mingsheng [1 ]
Wang, Xiwei [1 ]
Cui, Yingxin [1 ]
Wang, Dufu [2 ]
Han, Jisheng [1 ]
Cheong, Kuan Yew [3 ]
Tanner, Philip [4 ]
Zhao, Ming [5 ]
Xu, Xiangang [1 ]
机构：
[1] Shandong Univ, Inst Novel Semicond Mat, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Jinan Diamond Technol Co Ltd, Jinan 250100, Peoples R China
[3] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Nibong Tebal 14300, Penang, Malaysia
[4] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia
[5] Interuniv Microelect Ctr IMEC, B-3001 Leuven, Belgium
来源：
IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 08期
关键词：
Diamond; field effect transistor; solar blind phototransistor; high photoresponsivity; UV PHOTODETECTOR;
D O I：
10.1109/LED.2022.3180845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance solar-blind phototransistor, which is based on hydrogen-terminated diamond was fabricated and reported. The fabricated phototransistor was based on metal-semiconductor field effect transistor architecture with a high photoresponsivity (2.48x 10(4) A/W), high external quantum efficiency (1.44 x 10(5)), and high detectivity (5.08 x 10(9) Jones) under 213-nm light illumination (437 W/m(2)). At 5240 W/m(2) light illumination, the change in drain current exceeds six orders of magnitude. Through transient response measurement, the rise/decay time of the phototransistor is about 88 / 36 ms and there is no significant persistent photoconductive effect.
引用
收藏
页码：1271 / 1274
页数：4
相关论文
共 50 条
  • [21] Direct amination of hydrogen-terminated boron doped diamond surfaces
    Szunerits, Sabine
    Jama, Charafeddine
    Coffinier, Yannick
    Marcus, Bernadette
    Delabouglise, Didier
    Boukherroub, Rabah
    ELECTROCHEMISTRY COMMUNICATIONS, 2006, 8 (07) : 1185 - 1190
  • [22] A Physical Model of the Abnormal Behavior of Hydrogen-Terminated Diamond MESFET
    Wong, Hiu Yung
    Braga, Nelson
    Mickevicius, R. V.
    2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017), 2017, : 333 - 336
  • [23] Reversible Switch Memory Effect in Hydrogen-Terminated Ultrananocrystalline Diamond
    Tordjman, Moshe
    Bolker, Asaf
    Saguy, Cecile
    Baskin, Emanuel
    Bruno, Paola
    Gruen, Dieter M.
    Kalish, Rafi
    ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (09) : 1827 - 1834
  • [24] Gate Bias Effects on Hydrogen-Terminated Polycrystalline Diamond FETs
    Wang, Hongyue
    Liu, Yuebo
    Ge, Lei
    Xu, Mingsheng
    Shi, Yijun
    Cai, Zongqi
    Huang, Kai
    He, Zhiyuan
    Peng, Yan
    Wang, Xiwei
    Wang, Jinyan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (01) : 406 - 411
  • [25] Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface
    Kanazawa, H
    Song, KS
    Sakai, T
    Nakamura, Y
    Umezawa, H
    Tachiki, M
    Kawarada, H
    DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 618 - 622
  • [26] Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond
    Wang, Yan-Feng
    Wang, Wei
    Chang, Xiaohui
    Wang, Juan
    Fu, Jiao
    Zhu, Tianfei
    Liu, Zongchen
    Liang, Yan
    Zhao, Dan
    Liu, Zhangcheng
    Zhang, Minghui
    Wang, Kaiyue
    Wang, Hong-Xing
    Wang, Ruozheng
    MRS COMMUNICATIONS, 2019, 9 (01) : 165 - 169
  • [27] Ohmic Contact of Pt/Au on Hydrogen-Terminated Single Crystal Diamond
    Zhang, Minghui
    Lin, Fang
    Wang, Wei
    Li, Fengnan
    Wang, Yan-Feng
    Abbasi, Haris Naeem
    Zhao, Dan
    Chen, Genqiang
    Wen, Feng
    Zhang, Jingwen
    Bu, Renan
    Wang, Hongxing
    COATINGS, 2019, 9 (09)
  • [28] Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces
    Takeuchi, D
    Kato, H
    Ri, GS
    Yamada, T
    Vinod, PR
    Hwang, D
    Nebel, CE
    Okushi, H
    Yamasaki, S
    APPLIED PHYSICS LETTERS, 2005, 86 (15) : 1 - 3
  • [29] Work function of hydrogen-terminated diamond surfaces under ion impact
    Pakes, C. I.
    Hoxley, D.
    Rubanov, S.
    Rabeau, J. R.
    Hearne, S. M.
    Jamieson, D. N.
    Prawer, S.
    Kalish, R.
    SURFACE SCIENCE, 2007, 601 (24) : 5732 - 5735
  • [30] Photochemical functionalization of hydrogen-terminated diamond surfaces: A structural and mechanistic study
    Nichols, BM
    Butler, JE
    Russell, JN
    Hamers, RJ
    JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (44): : 20938 - 20947
12345