A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor

被引：9

作者：

Ge, Lei ^{[1
]}

Peng, Yan ^{[1
]}

Li, Bin ^{[1
]}

Chen, Xiaohua ^{[1
]}

Xu, Mingsheng ^{[1
]}

Wang, Xiwei ^{[1
]}

Cui, Yingxin ^{[1
]}

Wang, Dufu ^{[2
]}

Han, Jisheng ^{[1
]}

Cheong, Kuan Yew ^{[3
]}

Tanner, Philip ^{[4
]}

Zhao, Ming ^{[5
]}

Xu, Xiangang ^{[1
]}

机构：

[1] Shandong Univ, Inst Novel Semicond Mat, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[2] Jinan Diamond Technol Co Ltd, Jinan 250100, Peoples R China

[3] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Nibong Tebal 14300, Penang, Malaysia

[4] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia

[5] Interuniv Microelect Ctr IMEC, B-3001 Leuven, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 08期

关键词：

Diamond; field effect transistor; solar blind phototransistor; high photoresponsivity; UV PHOTODETECTOR;

D O I：

10.1109/LED.2022.3180845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance solar-blind phototransistor, which is based on hydrogen-terminated diamond was fabricated and reported. The fabricated phototransistor was based on metal-semiconductor field effect transistor architecture with a high photoresponsivity (2.48x 10(4) A/W), high external quantum efficiency (1.44 x 10(5)), and high detectivity (5.08 x 10(9) Jones) under 213-nm light illumination (437 W/m(2)). At 5240 W/m(2) light illumination, the change in drain current exceeds six orders of magnitude. Through transient response measurement, the rise/decay time of the phototransistor is about 88 / 36 ms and there is no significant persistent photoconductive effect.

引用

页码：1271 / 1274

页数：4

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