Time evolution of boron-doped crystalline and polycrystalline silicon resistance

被引：2

作者：

Suzuki, K ^{[1
]}

Tashiro, H ^{[1
]}

Aoyama, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2000年 / 147卷 / 08期

关键词：

D O I：

10.1149/1.1393864

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We activated 200 nm thick boron-doped crystalline silicon (c-Si) and polycrystalline silicon (poly-Si) layers at 1100 degrees C and examined the time dependence of the resistance of the layers with respect to subsequent processing steps at lower temperatures. The resistance of both c-Si and poly-Si does not change over time for a dose of 5 x 10(14) cm(-2). The resistance does increase with time and finally saturates, however, for the higher dose of 1 x 10(16) cm(-2). The onset time for this resistance increase of c-Si is much later than that of poly-Si. We have proposed a model that explains this resistance increase of both c-Si and poly-Si. (C) 2000 The Electrochemical Society. S0013-3651(00)01-072-7. All rights reserved.

引用

页码：3106 / 3108

页数：3

共 7 条

[1]

LU NCC, 1981, ELECTRON DEVIC LETT, V2, P95, DOI 10.1109/EDL.1981.25354

[2]

MORRIN FJ, 1954, PHYS REV, V96, P28

[3] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].