Radial distribution of C4H8-H2-TMS plasma during plasma-enhanced chemical vapor deposition of Si-doped glow discharge polymers

A silicon-doped glow discharge polymer (Si-GDP) was prepared by plasma-enhanced chemical vapor deposition technique of mixtures of trans-2-butene (C4H8), hydrogen (H-2), and tetramethylsilane (TMS). The plasma parameters were characterized by mass spectrometry. The film properties of Si-GDP were investigated by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. At a TMS flow of 0.15 cm(3)/min, the radial distribution of the relative intensities of CH fragment ions was uniform, which indicates balanced dissociation and polymerization. As the radial distance increases, the ion energy decreases, and the ratio of sp(3)/sp(2) carbon and the atomic ratio of Si increases. The purpose of this work was to explore correlations between C4H8/H-2/TMS plasma parameters and Si-GDP film properties.