Recombination luminescence and EPR of Mn doped Li2B4O7 single crystals

被引:23
作者
Romet, I. [1 ]
Buryi, M. [2 ]
Corradi, G. [3 ]
Feldbach, E. [1 ]
Laguta, V. [2 ]
Tichy-Racs, E. [3 ]
Nagirnyi, V. [1 ]
机构
[1] Univ Tartu, Inst Phys, W Ostwald Str 1, EE-50411 Tartu, Estonia
[2] Czech Acad Sci, Inst Phys, Cukrovarnicka 10-112, Prague 16200, Czech Republic
[3] Hungarian Acad Sci, Wigner Res Ctr Phys, Inst Solid State Phys & Opt, Konkoly Thege M Ut 29-33, H-I121 Budapest, Hungary
关键词
Lithium tetraborate; Q-band EPR; Photoluminescence; Thermoluminescence; Manganese; THERMALLY STIMULATED LUMINESCENCE; LITHIUM TETRABORATE; DOSIMETRIC CHARACTERISTICS; OPTICAL-ABSORPTION; GLOW CURVES; THERMOLUMINESCENCE; IRRADIATION; SIMULATION; PARAMETERS; POTASSIUM;
D O I
10.1016/j.optmat.2017.05.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Manganese doped Li(2)B(4)O7 (LTB) crystals have been studied using luminescence and EPR spectroscopy, extending the investigations for the first time from the X band to the Q band for higher resolution. Mn2+ ions are shown to substitute dominantly at lithium sites charge compensated by a nearby lithium vacancy. Excitation spectra of the Mn2+ ion emission have been studied in the energy range of 2.5-20 eV. Weak excitation bands up to 5.5 eV are ascribed to specific transitions within the same 3d(5) electronic configuration according to the Tanabe-Sugano diagram. A doublet of intense excitation bands in the 7-8 eV region is assigned to electronic transitions to the Mn2+ D-6 term split by crystal field into two sub-bands. Thermostimulated luminescence (TSL) curves were studied in the temperature range 5-600 K. Based on the EPR studies and the comparison of TSL spectra of irradiated crystals with spectra of photostimulated luminescence, models of TSL processes are proposed. Emission and TSL processes are shown to be strongly influenced by local lattice relaxation and the mobility of Li vacancies participating in complexes with three different charge states of the Mn dopant. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:184 / 193
页数:10
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