Copper Oxide Thin Films Synthesized by SILAR: Role of Varying Annealing Temperature

被引：19

作者：

CAYIR TASDEMIRCI, Tuba ^{[1
]}

机构：

[1] Erzincan Binali Yildirim Univ, Fac Engn, Dept Biomed Engn, TR-24100 Erzincan, Turkey

来源：

ELECTRONIC MATERIALS LETTERS | 2020年 / 16卷 / 03期

关键词：

Semiconductors; CuO thin films; SILAR method; Annealed; NANOSTRUCTURED CUO FILMS; IONIC LAYER ADSORPTION; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; SPRAY-PYROLYSIS; ELECTRODEPOSITION; PERFORMANCE; FABRICATION; NANOSHEETS; STEP;

D O I：

10.1007/s13391-020-00205-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To coat CuO thin films on the glass surface, an easily controlled successive ionic layer absorption and reaction method was used. CuO thin films were grown at room temperature. The CuO thin films obtained were annealed for 30 min at 200, 300 and 400 degrees C. The changes caused by annealing temperature on nanostructured CuO thin films were studied. Structural, morphological, optical and molecular properties of annealed CuO thin films were investigated. For this analysis, X-ray diffraction, Scanning electron microscopy, Atomic force microscopy, RAMAN and Optical absorption spectroscopy (UV-Vis) and Fourier transform infrared spectroscopy devices were used. Graphic

引用

页码：239 / 246

页数：8

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