Investigation on spectroscopic and electrical properties of p-Si/CdSxSe1-x (0≤ x ≤1) heterostructures for photodetector applications

被引：15
作者：
Moger, Sahana Nagappa [1 ]
Mahesha, M. G. [1 ]
机构：
[1] Manipal Acad Higher Educ, Manipal Inst Technol, Dept Phys, Manipal 576104, Karnataka, India
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2021年 / 870卷
关键词：
P-Si/CdSSe heterostructures; Photoluminescence; Low-temperature Raman; Photodetectors; THIN-FILMS; I-V; MICROSTRUCTURE;
D O I：
10.1016/j.jallcom.2021.159479
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
CdSxSe1-x (0 <= x <= 1) films were deposited on p-Si via thermal co-evaporation method with CdS and CdSe as source materials. The heterostructures were studied for their structural, spectroscopic and electrical be-haviours by using X-ray diffraction, photoluminescence spectroscopy, low temperature Raman spectroscopy and I-V characterization. Systematic shift in the diffraction peak has confirmed the composition modulation and presence of mixed phase in the ternary CdSSe. Temperature dependent Raman study showed that longitudinal optical modes are shifted to higher wavenumber, which is ascribed to variation in strain and lattice constants with temperature. The diode parameters including ideality factor and barrier height were extracted by applying various models to the temperature dependent I-V measurements. The spectral response of p-Si/CdSxSe1-x (0 <= x <= 1) were analysed and the heterostructure with x = 0.2 showed high response confirming the device suitability of the heterostructures. (c) 2021 Elsevier B.V. All rights reserved.
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页数：9
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共 36 条
[1]   Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition [J].
Abken, Anke E. ;
Halliday, D. P. ;
Durose, Ken .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
[2]   Photoluminescence and structural properties of cadmium sulphide thin films grown by different techniques [J].
Aguilar-Hernández, J ;
Contreras-Puente, G ;
Morales-Acevedo, A ;
Vigil-Galán, O ;
Cruz-Gandarilla, F ;
Vidal-Larramendi, J ;
Escamilla-Esquivel, A ;
Hernández-Contreras, H ;
Hesiquio-Garduño, M ;
Arias-Carbajal, A ;
Chavarría-Castañeda, M ;
Arriaga-Mejía, G .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (02) :111-114
[3]   Microstructure and crystal imperfections of nanosized CdSxSe1-x thermally evaporated thin films [J].
Akl, Alaa A. ;
Hassanien, A. S. .
SUPERLATTICES AND MICROSTRUCTURES, 2015, 85 :67-81
[4]   Gold Schottky contacts on (002) CdSe films growing on p-type silicon wafer [J].
Al-Kotb, M. S. ;
Al-Waheidi, J. Zamel ;
Kotkata, M. F. .
SUPERLATTICES AND MICROSTRUCTURES, 2013, 55 :131-143
[5]   Gamma dose dependent structural, optical and current-voltage characteristics of CdS/p-Si heterojunction [J].
Ali, Syed Mansoor ;
AlGarawi, M. S. ;
Farooq, W. A. ;
Atif, M. ;
Hanif, Atif ;
AlMutairi, Mona A. ;
Shar, Muhammad Ali .
MATERIALS CHEMISTRY AND PHYSICS, 2020, 240
[6]   Homogeneously Alloyed CdSe1-xSx Quantum Dots (0 ≤ x ≤ 1): An Efficient Synthesis for Full Optical Tunability [J].
Aubert, Tangi ;
Cirillo, Marco ;
Flamee, Stijn ;
Van Deun, Rik ;
Lange, Holger ;
Thomsen, Christian ;
Hens, Zeger .
CHEMISTRY OF MATERIALS, 2013, 25 (12) :2388-2390
[7]   SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE - LIMITATIONS OF FORWARD I-V METHODS [J].
AUBRY, V ;
MEYER, F .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) :7973-7984
[8]   Characterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to light [J].
Bilgin, Vildan ;
Sarica, Emrah ;
Demirselcuk, Barbaros ;
Erturk, Kadir .
PHYSICA B-CONDENSED MATTER, 2020, 599
[9]   The influence of substrate temperature on RF sputtered CdS thin films and CdS/p-Si heterojunctions [J].
Bozkaplan, Cihat ;
Tombak, Ahmet ;
Genisel, Mustafa Fatih ;
Ocak, Yusuf Selim ;
Akkilic, Kemal .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 58 :34-38
[10]   12.29% Low Temperature-Processed Dopant-Free CdS/p-Si Heterojunction Solar Cells [J].
Cai, Lun ;
Wang, Wenxian ;
Jin, Lei ;
Yao, Zhirong ;
Lin, Wenjie ;
Meng, Lanxiang ;
Ai, Bin ;
Liang, Zongcun ;
Huang, Yuelong ;
Zhang, Fuqin ;
Altermatt, Pietro P. ;
Shen, Hui .
ADVANCED MATERIALS INTERFACES, 2019, 6 (12)
1234