207-257 GHz Integrated Sensing Readout System with Transducer in a 130-nm SiGe BiCMOS Technology

被引：1

作者：

Wang, D. ^{[1
]}

Yun, J. ^{[2
]}

Eissa, M. H. ^{[2
]}

Kucharski, M. ^{[2
]}

Schmalz, K. ^{[2
]}

Malignaggi, A. ^{[2
]}

Wang, Y. ^{[2
]}

Borngraeber, J. ^{[2
]}

Liang, Y. ^{[2
]}

Ng, H. J. ^{[2
]}

Le, Q. H. ^{[1
]}

Huynh, D. K. ^{[1
]}

Kaempfe, T. ^{[1
]}

Seidel, K. ^{[1
]}

Kissinger, D. ^{[3
]}

机构：

[1] Fraunhofer IPMS CNT, Dresden, Germany

[2] Leibnitz Inst IHP, Frankfurt, Oder, Germany

[3] Ulm Univ, Ulm, Germany

来源：

2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2019年

关键词：

THz-LoC; BiCMOS; transducer; resonator; readout circuit; dielectric sensor; SiGe; DIELECTRIC SENSOR;

D O I：

10.1109/mwsym.2019.8700819

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a wideband integrated dielectric sensor with read-out circuit at 207-257 GHz in SiGe BiCMOS technology. The sensing element is equipped by a resonator that provides a bandpass frequency response which is varied in accordance to the carried permittivity change of the device under test. This variation can be sensed and recorded as the change of output voltage of an integrated 207-257 GHz 2 port vector network analyzer readout circuit. The demonstration of aforementioned readout system is verified by measuring the output of mixers as the reference, reflected and measured channel, and the uncalibrated S parameters of readout with different samples.

引用

页码：496 / 499

页数：4

共 19 条

[1]

Bon-Hyun Ku, 2017, 2017 IEEE MTT-S International Microwave Symposium (IMS), P980, DOI 10.1109/MWSYM.2017.8058753

[2]

Chien J.-C., 2013, IEEE MTT-S International Microwave Symposium Digest, P1

[3] A Wideband Low-Power LC-DCO-Based Complex Dielectric Spectroscopy System in 0.18-μm CMOS [J].