Carbon nanostructure-aSi:H photovoltaic cells with high open-circuit voltage fabricated without dopants

被引:15
作者
Schriver, M. [1 ,2 ,3 ]
Regan, W. [1 ,3 ,4 ]
Loster, M. [1 ,3 ]
Zettl, A. [1 ,3 ,4 ]
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Ctr Integrated Nanomech Syst, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
Nanostructures; Semiconductors; Photoconductivity and photovoltaics; SILICON; GRAPHENE;
D O I
10.1016/j.ssc.2010.01.013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Recently discovered production techniques allow the synthesis of carbon nanostructured films with large surface areas. The abundance of carbon and the unique properties of these nanostructures, including high transparency and excellent electrical conductivity, make these materials very interesting for photovoltaic applications, in particular in combination with amorphous silicon. We examine the properties of thin carbon nanotube films (buckypaper) and graphene in junctions with undoped amorphous silicon thin films. The observed open-circuit voltages, 390 mV for the carbon nanotube film and 150 mV for graphene, suggest that solar cells with high efficiency can be produced without expensive processing steps like doping, multilayer film deposition in high vacuum, or transparent conducting oxide deposition. The buckypaper cells are stable in ambient conditions for many weeks, at least. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:561 / 563
页数:3
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