Single-event upset and scaling trends in new generation of the commercial SOI PowerPC microprocessors

被引：9
作者：
Irom, Farokh
Farmanesh, Farhad
Kouba, Coy K.
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[2] NASA, Lyndon B Johnson Space Ctr, Houston, TX 77058 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 06期
关键词：
cyclotron; heavy ion; microprocessors; silicon on insulator;
D O I：
10.1109/TNS.2006.884383
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed.
引用
收藏
页码：3563 / 3568
页数：6
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