Metal organic framework derived hollow NiS@C with S-vacancies to boost high-performance supercapacitors

被引:113
作者
Huang, Chen [1 ]
Gao, Aimei [1 ,2 ]
Yi, Fenyun [1 ,2 ]
Wang, Yicong [4 ]
Shu, Dong [1 ,2 ]
Liang, Yansheng [1 ]
Zhu, Zhenhua [1 ]
Ling, Jingzhou [1 ]
Hao, Junnan [3 ]
机构
[1] South China Normal Univ, Sch Chem, Guangzhou 510006, Peoples R China
[2] Minist Educ, Engn Res Ctr Mat & Technol Electrochem Energy Sto, Guangzhou 510006, Peoples R China
[3] Univ Adelaide, Sch Chem Engn & Adv Mat, Adelaide, SA 5005, Australia
[4] South China Normal Univ, Anal & Testing Ctr, Guangzhou 510006, Peoples R China
基金
中国国家自然科学基金;
关键词
HiS; S-vacancy; Hollow structure; Supercapacitors; DFT calculations; ELECTRODE MATERIAL; SULFUR VACANCIES; POROUS CARBON; ENERGY; NANOPARTICLES; NANOSHEETS; SPHERES; CONSTRUCTION; COMPOSITE; NANORODS;
D O I
10.1016/j.cej.2021.129643
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Transition metal sulfides (TMS) are of great interest as promising battery-type electrode materials, however, the poor conductivity and sluggish reaction kinetics seriously limit their application. Here, we designed a hollow structured precursor of Ni-based metal-organic frameworks (Ni-MOFs) via Ostwald ripening mechanism. Based on this unique precursor, a hollow carbon-coated nickel sulfide nanocrystal (H-NiS1-X/C) with sulfur vacancies was further synthesized through an ion exchange strategy and thermal annealing. By optimizing the content of sulfur source, the sample with appropriate S-vacancies (H-NiS1-X/C-50) was developed. Benefiting from its hollow structure and S-vacancies, this H-NiS1-X/C-50 displayed a high reversible specific capacity (1728 F g(-1), 1 A g(-1)), stable cycling (72% capacity retention over 8000 cycles) and superior rate capability. After assembling the asymmetric supercapacitor, a high energy density of 36.88 Wh kg(-1) was achieved. Experimental results and DFT calculations demonstrate that introducing S-vacancies builds an embedded electric field and produces lattice distortions in H-NiS1-X/C, thus enhancing the conductivity of the material. Our strategy also provides a facile way to construct high-performance TMS with unique hollow structure and S-vacancies for developing advanced energy storage devices.
引用
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页数:10
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