Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations

被引：16

作者：

Nasyrov, KA ^{[1
]}

Novikov, YN

Gritsenko, VA

Yoon, SY

Kim, CW

机构：

[1] Russian Acad Sci, Inst Automat & Electrometry, Siberian Div, Novosibirsk 630090, Russia

[2] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

[3] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

JETP LETTERS | 2003年 / 77卷 / 07期

关键词：

D O I：

10.1134/1.1581966

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The conductivity of amorphous silicon nitride has been studied experimentally in a wide range of electric fields and temperatures. The experimental results are in a quantitative agreement with the theory of multiphonon ionization of deep centers for the bipolar model of conductivity. The best agreement between experiment and the calculation has been obtained for the same parameters of deep electron and hole centers. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：385 / 388

页数：4

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