High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

被引:12
作者
Doescher, H. [1 ]
Lilienkamp, G. [1 ]
Iskra, P. [1 ]
Daum, W. [1 ]
Helsch, G. [2 ]
Becker, S. [3 ]
Wrobel, R. J. [3 ]
Weiss, H. [3 ]
Suchorski, Y. [4 ]
机构
[1] Tech Univ Clausthal, Inst Energy Res & Phys Technol, D-38678 Clausthal Zellerfeld, Germany
[2] Tech Univ Clausthal, Inst Nonmetall Mat, D-38678 Clausthal Zellerfeld, Germany
[3] Univ Magdeburg, Inst Chem, D-39106 Magdeburg, Germany
[4] Vienna Univ Technol, Inst Mat Chem, A-1210 Vienna, Austria
关键词
GATE DIELECTRIC APPLICATION; ION-BOMBARDMENT; ZIRCONIUM-OXIDE; ZRO2; FILMS; TEMPERATURE; OXIDATION; SI(001); SILICON; SURFACE; SPECTROSCOPY;
D O I
10.1063/1.3340830
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZrO(2) films with a sub-10-nm thickness and a roughness of about 0.2 nm have been prepared on Si(001) by a sol-gel process based on zirconium-(IV)-n-propoxide. The topography of the obtained samples has been controlled by atomic force microscopy. Chemical composition and interface reactions of the deposited films have been studied by x-ray photoemission spectroscopy and Auger electron spectroscopy. The ZrO(2) films are stable against heating (up to 700 degrees C) in a moderate oxygen atmosphere (2 x 10(-5) mbar oxygen partial pressure). Minor changes in the surface composition occur after rapid annealing up to 1000 degrees C. (C) 2010 American Institute of Physics. [doi:10.1063/1.3340830]
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页数:7
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