High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

被引：12

作者：

Doescher, H. ^{[1
]}

Lilienkamp, G. ^{[1
]}

Iskra, P. ^{[1
]}

Daum, W. ^{[1
]}

Helsch, G. ^{[2
]}

Becker, S. ^{[3
]}

Wrobel, R. J. ^{[3
]}

Weiss, H. ^{[3
]}

Suchorski, Y. ^{[4
]}

机构：

[1] Tech Univ Clausthal, Inst Energy Res & Phys Technol, D-38678 Clausthal Zellerfeld, Germany

[2] Tech Univ Clausthal, Inst Nonmetall Mat, D-38678 Clausthal Zellerfeld, Germany

[3] Univ Magdeburg, Inst Chem, D-39106 Magdeburg, Germany

[4] Vienna Univ Technol, Inst Mat Chem, A-1210 Vienna, Austria

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 09期

关键词：

GATE DIELECTRIC APPLICATION; ION-BOMBARDMENT; ZIRCONIUM-OXIDE; ZRO2; FILMS; TEMPERATURE; OXIDATION; SI(001); SILICON; SURFACE; SPECTROSCOPY;

D O I：

10.1063/1.3340830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZrO(2) films with a sub-10-nm thickness and a roughness of about 0.2 nm have been prepared on Si(001) by a sol-gel process based on zirconium-(IV)-n-propoxide. The topography of the obtained samples has been controlled by atomic force microscopy. Chemical composition and interface reactions of the deposited films have been studied by x-ray photoemission spectroscopy and Auger electron spectroscopy. The ZrO(2) films are stable against heating (up to 700 degrees C) in a moderate oxygen atmosphere (2 x 10(-5) mbar oxygen partial pressure). Minor changes in the surface composition occur after rapid annealing up to 1000 degrees C. (C) 2010 American Institute of Physics. [doi:10.1063/1.3340830]

引用

页数：7

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