Structure, magnetic, and microwave properties of thick Ba-hexaferrite films epitaxially grown on GaN/Al2O3 substrates

被引:33
作者
Chen, Z. [1 ]
Yang, A. [1 ]
Mahalingam, K. [2 ]
Averett, K. L. [2 ]
Gao, J. [1 ,3 ]
Brown, G. J. [2 ]
Vittoria, C. [1 ,3 ]
Harris, V. G. [1 ,3 ]
机构
[1] Northeastern Univ, Ctr Microwave Magnet Mat & Integrated Circuits, Boston, MA 02155 USA
[2] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA
[3] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
关键词
barium compounds; epitaxial growth; ferrites; ferromagnetic resonance; liquid phase deposition; magnetic anisotropy; magnetic epitaxial layers; magnetisation; microwave spectra; mixing; pulsed laser deposition; transmission electron microscopy; X-ray diffraction; FERRITE FILMS;
D O I
10.1063/1.3446867
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thick barium hexaferrite [BaO center dot(Fe2O3)(6)] films, having the magnetoplumbite structure (i.e., Ba M), were epitaxially grown on c-axis oriented GaN/Al2O3 substrates by pulsed laser deposition followed by liquid phase epitaxy. X-ray diffraction showed (0,0,2n) crystallographic alignment with pole figure analyses confirming epitaxial growth. High resolution transmission electron microscopy images revealed magnetoplumbite unit cells stacked with limited interfacial mixing. Saturation magnetization, 4 pi M-s, was measured for as-grown films to be 4.1 +/- 0.3 kG with a perpendicular magnetic anisotropy field of 16 +/- 0.3 kOe. Ferromagnetic resonance linewidth, the peak-to-peak power absorption derivative at 53 GHz, was 86 Oe. These properties will prove enabling for the integration of low loss Ba M ferrite microwave passive devices with active semiconductor circuit elements in systems-on-a-wafer architecture. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3446867]
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页数:3
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