Synthesis of bulk GaN single crystals using Na-Ca flux

被引：45

作者：

Kawamura, F ^{[1
]}

Morishita, M ^{[1
]}

Iwahashi, T ^{[1
]}

Yoshimura, M ^{[1
]}

Mori, Y ^{[1
]}

Sasaki, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 12B期

关键词：

GaN; flux method; single crystal; high pressure; bulk; nitrogen vacancy;

D O I：

10.1143/JJAP.41.L1440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We grew GaN single crystals in Na-Ca flux and found that the presence of Ca in a high-temperature flux system has the following advantages for growing GaN single crystals. First, Cain solution drastically increased the yield of GaN crystals. Second, transparent GaN single crystals are easy to grow around the gas-liquid interface. Third, the pressure required to synthesize the GaN is reduced. These effects can be interpreted as resulting from increased nitrogen solubility in the flux. In this paper, we report the effects of Ca on the yield of GaN and threshold pressure for growing GaN in Na-Ca flux.

引用

页码：L1440 / L1442

页数：3

共 9 条

[1] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].