Epitaxial growth of 3C-SiC without carbonization process using 1,3-disilabutane

被引：3

作者：

Lee, KW ^{[1
]}

Yu, KS ^{[1
]}

Bae, JW ^{[1
]}

Kim, Y ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Adv Mat Div, Taejon 305600, South Korea

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

single precursors; 1,3-disilabutane; single source CVD;

D O I：

10.4028/www.scientific.net/MSF.264-268.175

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heteroepitaxial growth of cubic SiC films on (001) and (111) Si substrates without any carbonization process was carried out at temperatures 900-1000 degrees C under high vacuum conditions by single source chemical vapor deposition (CVD) using 1,3-disilabutane (H3SiCH2SiH2CH3). Regardless of the orientation of the Si substrate surface, the electron and X-ray diffraction results showed that the films deposited on Si with a temperature ramp lower than similar to 1.5 degrees C/s were monocrystalline over the growth temperature range. RES and AES depth profile indicated that the films are stoichiometric (the atomic ratio, of Si:C = 1.0:1.0) and homogeneous over the film thickness. ERD analysis for hydrogen incorporation demonstrated that our films contain about 0.35 atomic % of hydrogen, which is considerably lower than the H content (a few atomic %) of SiC films deposited from other single precursors.

引用

页码：175 / 178

页数：4