Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors

被引:7
|
作者
Guo, Xiaojiao [1 ]
Chen, Honglei [1 ]
Bian, Jihong [1 ]
Liao, Fuyou [2 ]
Ma, Jingyi [1 ]
Zhang, Simeng [1 ]
Zhang, Xinzhi [3 ,4 ]
Zhu, Junqiang [5 ]
Luo, Chen [6 ]
Zhang, Zijian [6 ]
Zong, Lingyi [1 ]
Xia, Yin [1 ]
Sheng, Chuming [1 ]
Xu, Zihan [7 ]
Gou, Saifei [1 ]
Wang, Xinyu [1 ]
Gong, Peng [8 ,9 ]
Liu, Liwei [1 ]
Jiang, Xixi [1 ]
An, Zhenghua [3 ,4 ]
Cong, Chunxiao [5 ]
Qiu, Zhijun [5 ]
Wu, Xing [6 ]
Zhou, Peng [1 ]
Chen, Xinyu [1 ]
Tong, Ling [1 ]
Bao, Wenzhong [1 ]
机构
[1] Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] Hong Kong Polytech Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
[3] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China
[4] Fudan Univ, Key Lab Micro, Shanghai 200433, Peoples R China
[5] Fudan Univ, Sch Informat Sci & Engn, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[6] East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Dept Elect Engn, Shanghai 200241, Peoples R China
[7] Shenzhen Six Carbon Technol, Shenzhen 518055, Peoples R China
[8] Fudan Univ, Dept Chem, Shanghai 200433, Peoples R China
[9] Fudan Univ, Shanghai Key Lab Mol Catalysis & Innovat Mat, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
two-dimensional semiconductor; field-effect transistors; chemical vapor deposition (CVD) synthesis; interlayer coupling; vacuum transfer method; dual-gate transistor; FIELD-EFFECT TRANSISTORS; BILAYER MOS2; LARGE-SCALE; LAYER; GROWTH; PHOTODETECTORS; PHOTORESPONSE; EVOLUTION; ENERGY; FILMS;
D O I
10.1007/s12274-022-4280-z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In comparison to monolayer (1L), multilayer (ML) two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability, higher mobility, and broader spectral response. However, the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films. In this work, we propose a strategy of stacking MoS2 monolayers via a vacuum transfer method, by which one could obtain wafer-scale high-quality MoS2 films with the desired number of layers at will. The optical characteristics of these stacked ML-MoS2 films (> 2L) indicate a weak interlayer coupling. The stacked ML-MoS2 phototransistors show improved optoelectrical performances and a broader spectral response (approximately 300-1,000 nm) than that of 1 L-MoS2. Additionally, the dual-gate ML-MoS2 transistors enable enhanced electrostatic control over the stacked ML-MoS2 channel, and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.
引用
收藏
页码:6620 / 6627
页数:8
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