Direct deposition of CeO2 films on Ni metal substrate by chemical vapor deposition

Cerium dioxide thin films have been grown in-situ directly on cube textured Ni substrate by metal-organic chemical vapor deposition (MOCVD). At a lower deposition temperature of 400 degrees C, an amorphous film was formed. The texture of crystalline CeO2 film was changed from (200) orientation to (111) orientation when the deposition temperature was increased from 450 degrees C to 550 degrees C. The growth rate was similar to 40 nm/min and the rms surface roughness was 50 nm for the CeO2 film deposited at 450 degrees C for 10 min. Surface roughness of the film was increased with the development of (111) orientation. Deposited CeO2, film showed a mixed texture of (100)<001> and (100)<011> orientation. Depending on the deposition condition, the transition from (100)<001> texture to (100)<011> orientation was observed.