Precipitation of boron in highly boron-doped silicon

被引：12

作者：

Mizushima, I

Mitani, Y

Koike, M

Yoshiki, M

Tomita, M

Kambayashi, S

机构：

[1] Toshiba Co Ltd, Microelect Engn Lab, Isogo Ku, Yokohama, Kanagawa 235, Japan

[2] Toshiba Corp, R&D Ctr, Adv Semicond Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

[3] Toshiba Corp, Environm Engn Lab, R&D Ctr, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

silicon; boron; supersaturation; deactivation; XPS; EELS;

D O I：

10.1143/JJAP.37.1171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The clustering of boron in highly boron-doped silicon and its influence on electrical deactivation are reported. Highly boron-doped crystalline silicon was fabricated as a starting material by solid phase epitaxy of boron-doped amorphous silicon films. Boron can be supersaturated in the crystallized samples annealed at a low temperature of about 600 degrees C. A lot of precipitates, containing clustered boron, were observed in the samples annealed at high temperatures of about 1000 degrees C. The chemical states and the atomic configuration of boron in samples annealed at various temperatures corresponded to the electrical deactivation of boron.

引用

页码：1171 / 1173

页数：3

共 7 条

[1]

ARMIGLIATO A, 1977, SEMICONDUCTOR SILICO, P638

[2] COORDINATION-NUMBER OF DOPED BORON ATOMS IN PHOTOCHEMICALLY-DEPOSITED AMORPHOUS-SILICON STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].