ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

被引：37

作者：

Aydin, Sefa B. K. ^{[1
]}

Yildiz, Dilber E. ^{[2
]}

Cavus, Hatice Kanbur ^{[1
]}

Sahingoz, Recep ^{[1
]}

机构：

[1] Bozok Univ, Fac Arts & Sci, Dept Phys, TR-66100 Yozgat, Turkey

[2] Hitit Univ, Fac Arts & Sci, Dept Phys, TR-19030 Corum, Turkey

来源：

BULLETIN OF MATERIALS SCIENCE | 2014年 / 37卷 / 07期

关键词：

ALD TiO2; electrical properties; interface state density; Schottky effect; Poole-Frenkel emission; I-V-T; ELECTRONIC PARAMETERS; TEMPERATURE; DEPOSITION; CHEMISTRY; MECHANISM;

D O I：

10.1007/s12034-014-0726-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at room temperature. The forward and reverse bias current-voltage (I-V) characteristics of diode were studied. Using thermionic emission (TE) theory, the main electrical parameters of the Al/TiO2/p-Si Schottky diode such as ideality factor (n), zero bias barrier height (Phi(Bo)) and series resistance (R-s) were estimated from forward bias I-V plots. At the same time, values of n, Phi(Bo) and R-s were obtained from Cheung's method. It was shown that electrical parameters obtained from TE theory and Cheung's method exhibit close agreement with each other. The reverse-bias leakage current mechanism of Al/TiO2/p-Si Schottky barrier diodes was investigated. The I-V curves in the reverse direction are taken and interpreted via both Schottky and Poole-Frenkel effects. Schottky effect was found to be dominant in the reverse direction. In addition, the capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of diode were investigated at different frequencies (50-500 kHz). The frequency dependence of interface states density was obtained from the Hill-Coleman method and the voltage dependence of interface states density was obtained from the high-low frequency capacitance method.

引用

页码：1563 / 1568

页数：6

共 28 条

[11] The electronic structure and optical response of rutile, anatase and brookite TiO2 [J].

Landmann, M. ;

Rauls, E. ;

Schmidt, W. G. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (19)

[12] Characterization of atomic-layer-deposited Al2O3/GaAs interface improved by NH3 plasma pretreatment [J].

Lu, Hong-Liang ;

Sun, Liang ;

Ding, Shi-Jin ;

Xu, Min ;

Zhang, David Wei ;

Wang, Li-Kang .

APPLIED PHYSICS LETTERS, 2006, 89 (15)

[13] Role of Ti phases in the modulation of border traps at the TiO2/n-Si interfaces [J].

Nasim, F. ;

Ali, A. ;

Hafizuddin, Mohammad ;

Bhatti, A. S. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (04)

[14]

Nicollian E. H., 2002, MOS METAL OXIDE SEMI

[15] On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p-Si (MIS) structures [J].

Pakma, O. ;

Serin, N. ;

Serin, T. ;

Altindal, S. .

PHYSICA B-CONDENSED MATTER, 2011, 406 (04) :771-776

[16] The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol-gel method [J].

Pakma, O. ;

Serin, N. ;

Serin, T. ;

Altindal, S. .

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2009, 50 (01) :28-34

[17] The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures [J].

Pakma, O. ;

Serin, N. ;

Serin, T. ;

Altindal, S. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (01)

[18] Deposition of nanocrystalline thin TiO2 films for MOS capacitors using Sol-Gel spin method with Pt and Al top electrodes [J].

Rathee, Davinder ;

Kumar, Mukesh ;

Arya, Sandeep K. .

SOLID-STATE ELECTRONICS, 2012, 76 :71-76

[19] Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I-V-T and C-V-T measurements [J].

Reddy, N. Nanda Kumar ;

Reddy, V. Rajagopal .

BULLETIN OF MATERIALS SCIENCE, 2012, 35 (01) :53-61

[20]

Rhoderick E.H., 1988, Metal-Semiconductor Contacts, Vsecond

← 1 2 3 →