Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization

被引：20

作者：

Li, Ning ^{[1
]}

Feng, Li-ping ^{[1
]}

Su, Jie ^{[1
]}

Zeng, Wei ^{[1
]}

Liu, Zheng-tang ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Coll Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China

来源：

RSC ADVANCES | 2016年 / 6卷 / 69期

基金：

中国国家自然科学基金;

关键词：

WS2; THIN-FILMS; CATALYTIC-ACTIVITY; BINDING-ENERGIES; DOPED WS2; OXIDE; NANOTUBES; SULFURIZATION; ABSORPTION; SCATTERING; SURFACES;

D O I：

10.1039/c6ra10474f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Composition, structure, optical and electrical properties of Al:WS2 (un-doped and Al-doped WS2) films prepared by atomic layer deposition (ALD) and CS2 vulcanization processing have been studied. Results show that Al:WS2 films grow with a preferential c(perpendicular to)-orientation. The core-level binding energies (BEs) of W 4f, S 2p, O 1s and Al 2s decrease with increasing Al doping content, indicating that Al-doped WS2 films have a p-type conductivity. Optical property analysis shows that the absorption coefficient (similar to 10(7) m(-1)) is comparable to that of WS2 single crystals and that Al doping content can tune the optical band gap of the films. Hall measurements show that p-type conductive Al-doped WS2 films can be obtained by Al doping. Hall mobility values for the un-doped WS2 and 2.40% Al-doped WS2 films are 1.63 x 101 and 9.71 cm(2) V (1) s (1), respectively. Comparing with un-doped WS2 films, the comparable Hall mobility of Al-doped WS2 films can be achieved by appropriate Al doping contents.

引用

页码：64879 / 64884

页数：6

共 44 条

[1] Mechanisms responsible for chemical shifts of core-level binding energies and their relationship to chemical bonding [J].