Epitaxial Fe on free-standing GaAs nanowires

被引：4
作者：
Yang, Mingze [1 ]
Darbandi, Ali [1 ]
Majumder, Sarmita [1 ]
Watkins, Simon [1 ]
Kavanagh, Karen [1 ]
机构：
[1] Simon Fraser Univ, Dept Phys, 8888 Univ Dr, Burnaby, BC V5A 1S6, Canada
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2016年 / 31卷 / 07期
基金：
加拿大自然科学与工程研究理事会;
关键词：
nanowires; epitaxial; GaAs; Fe; electrodeposition; contacts; FILMS;
D O I：
10.1088/0268-1242/31/7/074003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 +/- 0.03 eV (ideality factor 1.48 +/- 0.02) was found.
引用
收藏
页数：5
相关论文
共 23 条
  • [1] Epitaxial Fe/GaAs via electrochemistry
    Bao, ZL
    Kavanagh, KL
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (06)
  • [2] CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909
  • [3] Flatte M., 2007, IEEE Transactions on Electron Devices, V54, P5
  • [4] Directed assembly of nanowire contacts using electrodeposition
    Ingole, S.
    Aella, P.
    Hearne, Sean J.
    Picraux, S. T.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (03)
  • [5] Understanding the True Shape of Au-Catalyzed GaAs Nanowires
    Jiang, Nian
    Wong-Leung, Jennifer
    Joyce, Hannah J.
    Gao, Qiang
    Tan, Hark Hoe
    Jagadish, Chennupati
    [J]. NANO LETTERS, 2014, 14 (10) : 5865 - 5872
  • [6] Kavanagh K L, 2012, NANOFABRICATION TECH, P217
  • [7] Effect of argon plasma etching damage on electrical characteristics of gallium nitride
    Kawakami, Retsuo
    Inaoka, Takeshi
    [J]. VACUUM, 2008, 83 (03) : 490 - 492
  • [8] PROPERTIES OF FE SINGLE-CRYSTAL FILMS GROWN ON (100)GAAS BY MOLECULAR-BEAM EPITAXY
    KREBS, JJ
    JONKER, BT
    PRINZ, GA
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2596 - 2599
  • [9] Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes
    Li, CH
    Kioseoglou, G
    van 't Erve, OMJ
    Hanbicki, AT
    Jonker, BT
    Mallory, R
    Yasar, M
    Petrou, A
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (09) : 1544 - 1546
  • [10] Semiconductor nanowires
    Lu, Wei
    Lieber, Charles M.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (21) : R387 - R406
123