High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics

被引:17
作者
Reid, B. P. L. [1 ]
Zhu, T. [2 ]
Chan, C. C. S. [1 ]
Kocher, C. [1 ]
Oehler, F. [2 ]
Emery, R. [2 ]
Kappers, M. J. [2 ]
Oliver, R. A. [2 ]
Taylor, R. A. [1 ]
机构
[1] Univ Oxford, Dept Phys, Parks Rd, Oxford OX1 3PU, England
[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 | 2014年 / 11卷 / 3-4期
基金
英国工程与自然科学研究理事会;
关键词
quantum dots; non-polar; InGaN; biexciton; LIFETIME;
D O I
10.1002/pssc.201300666
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on optical studies of non-polar InGaN quantum dots grown on the (1120) plane. Excitonic and biexcitonic complexes are identified by their power dependence and show similar binding energies (similar to 36 meV) and recombination dynamics to conventional polar (0001) InGaN quantum dots. Measured lifetimes as low as 300 ps suggest a reduced internal electric field when compared with polar InGaN quantum dots. Temperature dependent micro-photoluminescence measurements on a single exciton with a lifetime of 327 ps reveal no significant exciton linewidth broadening up to 120 K, suggesting a reduction in phonon coupling strength when compared to polar quantum dots. This is supported by a measured lifetime of 313 ps for this exciton at 77 K, suggesting the measured exciton decay is almost purely radiative. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:702 / 705
页数:4
相关论文
共 26 条
[1]   Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot [J].
Amloy, S. ;
Moskalenko, E. S. ;
Eriksson, M. ;
Karlsson, K. F. ;
Chen, Y. T. ;
Chen, K. H. ;
Hsu, H. C. ;
Hsiao, C. L. ;
Chen, L. C. ;
Holtz, P. O. .
APPLIED PHYSICS LETTERS, 2012, 101 (06)
[2]   Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons [J].
Amloy, S. ;
Chen, Y. T. ;
Karlsson, K. F. ;
Chen, K. H. ;
Hsu, H. C. ;
Hsiao, C. L. ;
Chen, L. C. ;
Holtz, P. O. .
PHYSICAL REVIEW B, 2011, 83 (20)
[3]   Biexciton versus exciton lifetime in a single semiconductor quantum dot [J].
Bacher, G ;
Weigand, R ;
Seufert, J ;
Kulakovskii, VD ;
Gippius, NA ;
Forchel, A ;
Leonardi, K ;
Hommel, D .
PHYSICAL REVIEW LETTERS, 1999, 83 (21) :4417-4420
[4]   Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk [J].
Bardoux, R. ;
Kaneta, A. ;
Funato, M. ;
Kawakami, Y. ;
Kikuchi, A. ;
Kishino, K. .
PHYSICAL REVIEW B, 2009, 79 (15)
[5]  
Becker R. J., 1999, MRS P, V597
[6]   Size dependence of two-photon absorption in semiconductor quantum dots [J].
Dakovski, Georgi L. ;
Shan, Jie .
JOURNAL OF APPLIED PHYSICS, 2013, 114 (01)
[7]   Blue single photon emission up to 200K from an InGaN quantum dot in AlGaN nanowire [J].
Deshpande, Saniya ;
Das, Ayan ;
Bhattacharya, Pallab .
APPLIED PHYSICS LETTERS, 2013, 102 (16)
[8]   Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire [J].
Deshpande, Saniya ;
Heo, Junseok ;
Das, Ayan ;
Bhattacharya, Pallab .
NATURE COMMUNICATIONS, 2013, 4
[9]   Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth [J].
Haeberlen, M. ;
Badcock, T. J. ;
Moram, M. A. ;
Hollander, J. L. ;
Kappers, M. J. ;
Dawson, P. ;
Humphreys, C. J. ;
Oliver, R. A. .
JOURNAL OF APPLIED PHYSICS, 2010, 108 (03)
[10]   Progress in the optical studies of single InGaN/GaN quantum dots [J].
Jarjour, A. F. ;
Oliver, R. A. ;
Taylor, R. A. .
PHILOSOPHICAL MAGAZINE, 2007, 87 (13) :2077-2093