Hillock-free heavily boron-doped homoepitaxial diamond films on misoriented (001) substrates

被引：21

作者：

Tokuda, Norio ^{[1
]}

Umezawa, Hitoshi

Yamabe, Kikuo

Okushi, Hideyo

Yamasaki, Satoshi

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan

[2] AIST, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[4] Univ Tsukuba, Tsukuba Res Ctr Interdisciplinary Mat Sci, Tsukuba, Ibaraki 3058571, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4A期

关键词：

diamond; surface; lateral growth; homoepitaxy; boron doping;

D O I：

10.1143/JJAP.46.1469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We succeeded in the growth of a hillock-free heavily boron-doped diamond (001) film with a boron concentration of 6 x 10(20) atoms/cm(3), being an ideal bottom layer for diamond electronic devices. The growth of hillocks was suppressed using diamond (001) Substrates with misorientation angles of around 2 degrees. The suppression could be achieved by the enhanced lateral growth on high-theta substrates.

引用

页码：1469 / 1470

页数：2

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NATURE, 2005, 438 (7068) :647-650

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