Hillock-free heavily boron-doped homoepitaxial diamond films on misoriented (001) substrates

被引：21
作者：
Tokuda, Norio [1 ]
Umezawa, Hitoshi
Yamabe, Kikuo
Okushi, Hideyo
Yamasaki, Satoshi
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] AIST, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[4] Univ Tsukuba, Tsukuba Res Ctr Interdisciplinary Mat Sci, Tsukuba, Ibaraki 3058571, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4A期
关键词：
diamond; surface; lateral growth; homoepitaxy; boron doping;
D O I：
10.1143/JJAP.46.1469
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We succeeded in the growth of a hillock-free heavily boron-doped diamond (001) film with a boron concentration of 6 x 10(20) atoms/cm(3), being an ideal bottom layer for diamond electronic devices. The growth of hillocks was suppressed using diamond (001) Substrates with misorientation angles of around 2 degrees. The suppression could be achieved by the enhanced lateral growth on high-theta substrates.
引用
收藏
页码：1469 / 1470
页数：2
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