Melt Growth and Physical Properties of Bulk LaInO3 Single Crystals

被引:10
作者
Galazka, Zbigniew [1 ]
Irmscher, Klaus [1 ]
Ganschow, Steffen [1 ]
Zupancic, Martina [1 ]
Aggoune, Wahib [2 ,3 ]
Draxl, Claudia [2 ,3 ]
Albrecht, Martin [1 ]
Klimm, Detlef [1 ]
Kwasniewski, Albert [1 ]
Schulz, Tobias [1 ]
Pietsch, Mike [1 ]
Dittmar, Andrea [1 ]
Grueneberg, Raimund [1 ]
Juda, Uta [1 ]
Schewski, Robert [1 ]
Bergmann, Sabine [1 ]
Cho, Hyeongmin [4 ]
Char, Kookrin [4 ]
Schroeder, Thomas [1 ,5 ]
Bickermann, Matthias [1 ,6 ]
机构
[1] Leibniz Inst Kristallzuchtung, Dept Volume Crystals, Max Born Str 2, D-12489 Berlin, Germany
[2] Humboldt Univ, Inst Phys, Zum Grossen Windkanal 2, D-12489 Berlin, Germany
[3] Humboldt Univ, IRIS Adlershof, Zum Grossen Windkanal 2, D-12489 Berlin, Germany
[4] Seoul Natl Univ, Dept Phys & Astron, Inst Appl Phys, Seoul 08826, South Korea
[5] Humboldt Univ, Inst Phys, Newtonstr 15, D-12489 Berlin, Germany
[6] Tech Univ Berlin, Inst Chem, Str 17 Juni 115, D-10623 Berlin, Germany
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2021年 / 218卷 / 16期
关键词
bandgaps; band structures; LaInO3; melt growth; single crystals; wafers; DOPED LAINO3; MOBILITY;
D O I
10.1002/pssa.202100016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Large bulk LaInO3 single crystals are grown from the melt contained within iridium crucibles by the vertical gradient freeze (VGF) method. The obtained crystals are undoped or intentionally doped with Ba or Ce, and enabled wafer fabrication of size 10 x 10 mm(2). High melting point of LaInO3 (approximate to 1880 degrees C) and thermal instability at high temperatures require specific conditions for bulk crystal growth. The crystals do not undergo any phase transition up to 1300 degrees C, above which a noticeable thermal decomposition takes place. The good structural quality of the crystals makes them suitable for epitaxy. The onset of strong optical absorption shows orientation-dependent behavior due to the orthorhombic symmetry of the LaInO3 crystals. Assuming direct transitions, optical bandgaps of 4.35 and 4.39 eV are obtained for polarizations along the [010] and the [100], [001] crystallographic directions, respectively. There is an additional weak absorption in the range between 2.8 and 4 eV due to oxygen vacancies. Density-functional-theory calculations support the interpretation of the optical absorption data. Cathodoluminescence spectra show a broad, structured emission band peaking at approximate to 2.2 eV. All bulk crystals are electrically insulating. The relative static dielectric constant is determined at a value of 24.6 along the [001] direction.
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页数:10
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